发明名称 Photomask material
摘要 There is disclosed a photomask material comprising a substrate, and at least one layer containing mixture of a metal oxide and a metal nitride or at least one metal nitride layer provided on the substrate, and the photomask material may comprise a substrate and a mask layer provided on the substrate, the mask layer consisting of a layer containing a lower metal oxide and/or a lower metal nitride, and a layer containing a mixture of a higher oxide and a higher nitride of the same metal or a higher metal nitride layer of the same metal. The photomask material of the present invention exhibits excellent resistance to the cleaning solutions and can be used repeatedly.
申请公布号 US4497878(A) 申请公布日期 1985.02.05
申请号 US19820405724 申请日期 1982.08.06
申请人 KONISHIROKU PHOTO INDUSTRY CO., LTD. 发明人 HATANO, TAKASHI;MARUYAMA, AKIRA
分类号 G03F1/00;G03F1/08;H01L21/027;(IPC1-7):B32B15/04;B32B15/00 主分类号 G03F1/00
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