发明名称 |
Photomask material |
摘要 |
There is disclosed a photomask material comprising a substrate, and at least one layer containing mixture of a metal oxide and a metal nitride or at least one metal nitride layer provided on the substrate, and the photomask material may comprise a substrate and a mask layer provided on the substrate, the mask layer consisting of a layer containing a lower metal oxide and/or a lower metal nitride, and a layer containing a mixture of a higher oxide and a higher nitride of the same metal or a higher metal nitride layer of the same metal. The photomask material of the present invention exhibits excellent resistance to the cleaning solutions and can be used repeatedly.
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申请公布号 |
US4497878(A) |
申请公布日期 |
1985.02.05 |
申请号 |
US19820405724 |
申请日期 |
1982.08.06 |
申请人 |
KONISHIROKU PHOTO INDUSTRY CO., LTD. |
发明人 |
HATANO, TAKASHI;MARUYAMA, AKIRA |
分类号 |
G03F1/00;G03F1/08;H01L21/027;(IPC1-7):B32B15/04;B32B15/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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