发明名称 HIGH-FREQUENCY SPUTTERING METHOD FOR ELECTRIFIABLE MATERIAL
摘要 PURPOSE:To form a coated film of an electrifiable material which is less in defect and less in mixing an ion being a sputtering gas by biasing a coating substrate and the coated film in the positive. CONSTITUTION:A bias electric power source 21 is connected to a substrate electrode 17 and both a coating substrate 18 fitted to the electrode 17 and a coated film 20 formed on the substrate 18 are biased in the positive. In this state, the coated film 20 of an electrified material is formed on the above- mentioned substrate 18 by performing the high-frequency sputtering.
申请公布号 JPS61276966(A) 申请公布日期 1986.12.06
申请号 JP19850093183 申请日期 1985.04.30
申请人 OKI ELECTRIC IND CO LTD 发明人 MITA MITSURO;SEKIDO MUTSUHIRO;HAYASHI NAOJI;KOIZUMI MASUMI
分类号 C23C14/40;H05B33/10;H05B33/12;H05B33/26 主分类号 C23C14/40
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