发明名称 |
HIGH-FREQUENCY SPUTTERING METHOD FOR ELECTRIFIABLE MATERIAL |
摘要 |
PURPOSE:To form a coated film of an electrifiable material which is less in defect and less in mixing an ion being a sputtering gas by biasing a coating substrate and the coated film in the positive. CONSTITUTION:A bias electric power source 21 is connected to a substrate electrode 17 and both a coating substrate 18 fitted to the electrode 17 and a coated film 20 formed on the substrate 18 are biased in the positive. In this state, the coated film 20 of an electrified material is formed on the above- mentioned substrate 18 by performing the high-frequency sputtering.
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申请公布号 |
JPS61276966(A) |
申请公布日期 |
1986.12.06 |
申请号 |
JP19850093183 |
申请日期 |
1985.04.30 |
申请人 |
OKI ELECTRIC IND CO LTD |
发明人 |
MITA MITSURO;SEKIDO MUTSUHIRO;HAYASHI NAOJI;KOIZUMI MASUMI |
分类号 |
C23C14/40;H05B33/10;H05B33/12;H05B33/26 |
主分类号 |
C23C14/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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