发明名称 PROCESS FOR LIQUID PHASE GROWTH OF OXIDE
摘要 PURPOSE:To obtain grown crystal of high purity by retarding decomposition of carbonate by applying higher gaseous CO2 pressure than equilibrium gaseous CO2 pressure to a soln. consisting of alkali earth metal carbonate and an oxide and allowing the oxide to grow in the liquid phase utilizing the soln. as solvent. CONSTITUTION:A substrate 2 for single crystal is placed on an end of a crucible 1 consisting of sintered BaTiO3, and BaCO3, powder 3 is arranged to another end. The crucible 1 is inclined in one direction under ca. 2atm CO2 pressure and the crucible is heated at about 1,300 deg.C to decompose a part of BaCO3 and a soln. contg. BaCO3 and BaO is formed. The wall of the crucible 1 is dissolved in the solvent to form satd. soln. 4 contg. BaTiO3 as solute. Then, the crucible 1 is inclined to the reverse direction to cover the substrate for the single crystal 2 with the satd. soln., and the temp. of the crucible is lowered slowly. Thereafter, the gaseous CO2 pressure is reduced to <=1atm, and residual solvent is converted to BaO, and BaO is removed by washing with water. Thus, the aimed grown crystal is obtd.
申请公布号 JPS6021896(A) 申请公布日期 1985.02.04
申请号 JP19830128744 申请日期 1983.07.16
申请人 SHINNIHON MUSEN KK 发明人 KIMURA CHIKAO
分类号 C30B9/06;C30B19/02;C30B19/04;C30B29/32;H01L21/208 主分类号 C30B9/06
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