| 摘要 |
<p>PURPOSE:To form parts, where the concentration of addition impurities has been continuously changed in the interface between each layer, as well as to eliminate the peeling-off of a semiconductor film due to the difference of distortion in the film by using the semiconductor film as a barrier layer and also to prevent the rise of the residual potential. CONSTITUTION:A barrier layer 3 consisting of an amorphous silicon is deposited on the surface of an aluminum or the surface of a conductive substrate 2, whose surface has been performed an oxidation treating. Elements of IIIa Group and Va Group, the Periodic Table, are dopped on the barrier layer 3 and the specific resistance of the layer 3 is controlled in such a way that the specific resistance of the first barrier layer 3a becomes 10<7>OMEGAcm or thereabouts and the specific resistance of the second barrier layer 3b becomes 10<13>OMEGAcm or thereabouts. A photoconductive layer 4 consisting of an amorphous semiconductor, which has been formed using silicone atoms involving hydrogen doped with boron as the parent body, is formed on the barrier layer 3 and a surface coated layer 5 is formed on the surface of the layer 4.</p> |
