PROCESS FOR LIQUID PHASE EPITAXIAL GROWTH

摘要

PURPOSE:To perform growth while controlling the compsn. in the growing layer optionally by allowing a substrate for the growth to contact with one surface of the first melt contg. the solute for the epitaxial growth and allowing another surface of the melt to contact with the second melt having different compsn. of the solute. CONSTITUTION:A deep well for setting a substrate 3 for the growth is provided to a stationary part 1 of a graphite boat consisting of the stationary part 1 and a movable part 2, and the first melt 4 is filled in a receiver formed of the well of the stationary part 1 and one of the openings of the movable part 2. The second melt 5 consisting of the same solvent as the melt and different solute composition is prepd. in another receiver formed of another opening in the movable part 2. Then, the movable part 2 is moved to bring the first melt 4 to contact with the second melt 5 to cause diffusion of the solute due to the difference of the compsn. of the solute; thus the concn. of the solute in the melt contacting with the substrate 3 for the growth is changed with the lapse of time. In this way, the compsn. of crystal layer for epitaxial growth is controlled optionally.