| 摘要 |
PURPOSE:To prevent the operating speed due to a load capacitance from being lowered by adding a bipolar transistor (TR) having a large current driving capability to an output circuit comprising CMOS logical circuits so as to reduce the occupied area of the output circuit. CONSTITUTION:A drain of a P-channel MOS TRQ31 is connected to a base of a PNP bipolar TRQ33 and a drain of an N-channel MOS TRQ32 is connected to a base of a PNP bipolar TRQ34 respectively. When a low level input voltage is applied to an input terminal 31, a low level output voltage appears at an output 32. When a high level input is applied to the input terminal 31, a high level output voltage appears at the output 32. Since each collector current of the TRs Q33, Q34 charges/discharges the load capacitor with the capability being hFE times the current applied to the base when they are conducted, the response of the output is quickened accordingly. |
