| 摘要 |
PURPOSE:To enable to control the threshold value of a transistor by a method wherein an insulating film is arranged between the first layer metal wiring and the second layer metal wiring, and a through hole is formed on said insulating film. CONSTITUTION:An etching is performed on the second insulating film 13 only of a through hole 14, but another etching is performed not only on the film 13 but also on the first insulating film 6 in the case of the aperture 10 to be used for ion implantation. The threshold value of a transistor can be brought under control by performing an ion implantation from the aperture 10. Besides, the second metal wiring 15 is provided, is connected to the first metal wiring 7, and the final insulating film 12 is provided. Thus, the threshold value of the transistor can be controlled only by adding an ion implanting process to the ordinary multilayer wiring process. |
