| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit memory device of high reliability by a method wherein a ground line to which a source is connected is arranged outside, and a diffused region for guard is formed thereunder by layout in such a manner that the source side diffused layer of a memory element positioned on the outermost side comes outside a drain region. CONSTITUTION:The ground line GL1 is formed outside the memory elements M11-Mm1 of the first row formed closest to an X decoder 2 of a memory array 1, and the drains of the elements M11-Mm1 are connected in common to a data line D1 formed inside. Besides, a ground line GLe is formed outside memory elements M1n-Mmn of the final row of the memory array 1, the sources of which elements are then connected in common. When the regions of diffused layers are formed in the upper and lower parts of the array 1, respectively, and then connected to the ground lines GL1 and GLe, a guard ring enclosing the memory array 1 can be formed without increasing the chip size. |
