| 摘要 |
PURPOSE:To obtain a method effective in application to the semiconductor device having two or more kinds of electrodes made of different materials by utilizing the phenomenon that SiO2 is formed relatively thickly on Si or poly Si doped with As at high concentration by low temperature wet oxidation. CONSTITUTION:In the case of a Schottky barier diode, an oxide film is formed on the surface of the poly Si layer 9 doped with As at a high concentration more thickly than on the surface of the other active region by low temperature wet oxidation. Then, the oxide film 12 is left thin by etching, and platinum series electrodes 14 are formed at the parts of a base electrode 13B, a collector electrode 13C, and a barrier electrode 13b. At this time, since the film 12 remains at the contact hole part of an emitter region 8, the layer 9 is not damaged by etching. The oxide film 12 on the region 8 is removed, and an aluminum series metal is evaporated and photoetched; thereby aluminum series electrodes 15 are formed on all of the electrode parts. |
