| 摘要 |
PURPOSE:To obtain the titled device entirely solidified under elimination of movable parts such as a precise lens system by a method wherein a photo switch is constructed on a chip of compound semiconductor including the function of light reception and a light emitting region. CONSTITUTION:With an N<+> conductivity type InP substrate 8 as an emitter, a P type InGaAsP 9 serving as a base layer, an N type InGaAsP 10 as a collector, an N type InP 12 as a clad layer, an InGaAsP 13 as an active layer, and a P<+> type InP 11 are epitaxially grown thereon successively. Thereafter, etching removal is carried out to the collector layer 10 by leaving stripes of the required number of output, and then P type InP layers 15 to entrap current and light and N type InP layers 16 are selectively epitaxially grown. Next, an insulation film 17 is adhered and contact holes are bored above the stripes of insulation 18, and electrode metal 19 and back electrodes 20 and 20a are patterned by vapor deposition and treated by alloying. |
