| 摘要 |
PURPOSE:To form a monolithic IC containing low resistant inductance by a method wherein the conductor pattern of an inductor connected to an IC circuit is formed at the same time with the conductor pattern at the uppermost layer of the circuit and then covered with an insulation layer excluding the part of contact holes, and thereafter an inductor pattern consisting of a metallic thin film is formed on this insulation layer and further subjected to plating. CONSTITUTION:An SiO2 layer 10 is formed by a CVD method and coated with a photo resist 11, and windows are opened in the parts of the contact hole 12 and the pad 7 of a plane coil by exposure and development, thereafter windows are opened in the layer 10 by dry etching. Next, the formation of the contact hole 12 and the bulk rise of the pad 7 are carried out by Au formation at these window-opened parts by a vacuum vapor deposition method and a lift-off method. Then, the entire surface is coated with a resist 13, windows being opened in the part for plane coil 5 formation and at the position of the contact hole 12 and the pad 7, and a Ti and Au layer being then formed by a vapor deposition method, etc. After removal of the resist 13 by dissolution, an Au-plated layer 15 is formed on the Ti-Au layers 14 by Au plating, thereby enabling the formation of the plane coil. |
