发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a wiring, dimensional accuracy thereof is high and resistance thereof is low, by forming the wiring on a package substrate by a multilayer wiring consisting of chromium and copper. CONSTITUTION:A wiring 4 is formed as three layer thin-film multilayer wirings consisting of a chromium layer 10 formed on a package substrate 1 after sintering through the evaporation of a thin-film, a copper layer 11 evaporated on the layer 10 in a thin-film shape and a chromium layer 12 evaporated on the layer 11 in the thin-film shape. A pedestal section 5 is composed of a copper layer 13 evaporated on the chromium layer 12 as the uppermost layer of the wiring 4 in the thin-film shape and a chromium layer 14 evaporated around the copper layer 13 in the thin-film shape. Since the wiring 4 is formed by the three layer thin- film evaporated layers of the chromium layer 10, the copper layer 11 and the chromium layer 12, the wiring 4 and the pedestal section 5 are formed with dimensional accuracy higher than a tungsten wiring formed through sintering. Accordingly, a large-sized pellet can be face-down bonded, and the resistance of the wiring 4 can be lowered by the presence of the copper layer 11.
申请公布号 JPS6020521(A) 申请公布日期 1985.02.01
申请号 JP19830127630 申请日期 1983.07.15
申请人 HITACHI SEISAKUSHO KK 发明人 ISHIDA TAKASHI;SEKI MASATOSHI;SAWARA KUNIZOU;EMOTO YOSHIAKI;KAMATA CHIYOSHI
分类号 H01L21/60 主分类号 H01L21/60
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