| 摘要 |
PURPOSE:To provide the titled device with the characteristics of high speed and high withstand voltage making it easy to integrate a transistor with high withstand voltage with another transistor required of supplementary characteristics within the same substrate. CONSTITUTION:Within a PNP transistor 17, a P type emitter 72 is formed in an island 4 and then a part of an insulating film 12 is made into a windown to laminate an N type base 84, a P type collector 95. Especially the P type collector 95 is extended from the base 84 onto the insulating film 12 to provide another window 10 for collector electrode and a collector electrode 11 on a position distant from the base 84. In case of electrically connecting the base 84 to any external parts, the base 84 is extended onto the insulating film 12 just like the collector 95 to provide another electrode 11a for the base 84 on a position distant from the collector 95. The load voltage on the transistor 17 is impressed on a P-N junction comprising the base 84 and the collector 95 and if the impurity concentration in the collector 95 is reduced less than that in the base 84, the depletion layer may be extended mainly into the collector region 95 on the insulating film 12 to prevent an avalanche yield from happening by sufficiently extending the distance between the base 84 and the electrode 11a (collector offset distance). |
