| 摘要 |
PURPOSE:To obtain an output signal of large voltage amplitude by simple constitution by a method wherein a P type region connected electrically to the collector of an injection bipolar logic circuit element in the preceding stage, and to the base of a bipolar NPN transistor in the succeeding stage is provided. CONSTITUTION:A P type region 102 formed on an N type substrate 100 is connected electrically to the collector of an IIL and to the base of a bipolar transistor TR106. Holes implanted to the substrate 100 from an injector 101 are collected to the region 102. For example, when the IIL inverter transistor is in a conducting condition, the current collected to the region 102 is absorbed into the collector, the TR106 is made to be in a cut-off condition, and the voltage of an output terminal 108 becomes to the same grade with an electric power source voltage. The electric power source voltage can be allowed up to a breakdown voltage between the collector and the emitter of the TR106. Moreover, when it is in the cut-off condition, the TR106 is made to be in the conducting condition, and the output terminal 108 is made to be the saturated voltage of the TR106. At this time, only the grade of the voltage between the base and the emitter in the forward direction of the TR106 is applied to the collector 104 of the IIL, and breakdown of the inverter transistor is not generated. |
