发明名称 |
SEMICONDUCTOR SWITCH CIRCUIT |
摘要 |
PURPOSE:To decrease the gate drive current by sharing a gate drive current of two PNPN switches connected in series. CONSTITUTION:An anode terminal of the 1st PNPN switch Q1 is connected to a DC supply circuit N1 and a cathode is connected to a subscriber terminal T. An anode of the 2nd PNPN switch Q2 is connected to the subscriber terminal T and a cathode is connected to the DC power supply circuit N1. A gate drive current source circuit comprising a transistor 7 is connected in common between a gate of the 1st PNPN switch Q1 and a gate of the 2nd PNPN switch Q2. Thus, the gate drive current of the two PNPN switches connected in series is decreased. |
申请公布号 |
JPS6020628(A) |
申请公布日期 |
1985.02.01 |
申请号 |
JP19830127574 |
申请日期 |
1983.07.15 |
申请人 |
NIPPON DENSHIN DENWA KOSHA |
发明人 |
INABE YASUNOBU;TANABE MASAAKI;KIMURA TADAKATSU |
分类号 |
H03K17/72;H03K17/73;H04M19/00;H04Q3/42 |
主分类号 |
H03K17/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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