发明名称 PROCESS FOR MAKING AMORPHOUS SEMICONDUCTOR SUBSTANCES ON A SUBSTRATE
摘要 <p>A process for depositing semiconductor alloy films on a substrate by supplying microwave energy to a first gaseous mixture held at subatmospheric pressure in a reaction vessel to establish a glow discharge in the mixture, characterized in supplying microwave energy to a second gaseous mixture remote from the substrate to form free radicals, conveying the free radicals to the vicinity of the substrate and incorporating the free radicals in the film.</p>
申请公布号 IN161892(B) 申请公布日期 1988.02.20
申请号 IN1169CA1983 申请日期 1983.09.24
申请人 ENERGY CONVERSION DEVICES, INC. 发明人 OVSHINSKY STANFORD ROBERT;ALFRED DAVID DEAN;WALTER LEE;HUDGENS STEPHEN JENKINS
分类号 C23C16/30;C23C16/50;C23C16/511;H01J37/32;H01L21/205;H01L31/04;(IPC1-7):H01L7/00;H01L15/00 主分类号 C23C16/30
代理机构 代理人
主权项
地址