| 摘要 |
PURPOSE:To obtain the titled diode capable of high-speed modulation and facile manufacture by burying the double hetero structure including an active layer and a clad layer by the second clad layer of high resistivity. CONSTITUTION:The double hetero structure is composed of the first clad layer 3a having the impurity concentration enough for confining of injected carriers, an active layer 2a and a semiconductor substrate 1. By the current injection part 51 of 20mum diameter, the current is narrowed and injected into the active layer 2a and the structure operates as the areal emission type light emitting diode in which the emitted light is took out through a light taking-out window 61. The leakage current which flows directly to the semiconductor substrate 1 instead of flowing from the current injection part 51 to the active layer 2a, which often becomes a problem in a buried-in structure, is sufficiently restrained by the second clad layer 4 consisting of the InP having a P type conductive type of high resistivity, a wide forbidden band gap and a large diffusion potential in a junction with the semiconductor substrate 1. |
