| 摘要 |
PURPOSE:To enhance sharply density of integration of a semiconductor integrated circuit by a method wherein the channels of MOSFETs of the plural number are formed in common, the gate electrodes thereof are made to approach mutually or made to overlap partially, and isolated electrically by an insulating film formed on the surface of the gate electrode on one side. CONSTITUTION:Enhancement type MOSFETs Q1, Q2 are laid out on a semiconductor substrate 10 forming a line adjoining each other, and the mutual gate electrodes 16, 16 thereof are overlapped partially. The adjoining two gate elec- trodes 16, 16 are isolated electrically mutually according to an insulating film 18 formed on the surface of the gate electrode 16 on one side. Accordingly, even when positioning between the two gate electrodes 16, 16 becomes out of order by a small amount, both the gate electrodes 16, 16 are isolated surely electrically accordingly to the insulating film 18 formed previously. |
