| 摘要 |
PURPOSE:To form a metallic layer with high yield by boring and machining a layer consisting of a heat-resistant material formed on a substrate, coating the whole surface with a desired metal, coating a bored and machined section with a resist pattern, etc. in size in which the bored and machined section is overhung, removing the unnecessary metal and the heat-resistant material while using the bored and machined section as a mask and over-etching the layer. CONSTITUTION:A SiN film 3 is applied extending over the whole surface of a substrate 1. A pattern is formed by a photo-resist, and a hole with an approximately vertical sectional shape is machined to SiN 3 while using the photo-resist as a mask. A SiO2 film 4 is applied extending over the whole surface. When SiO2 4 is removed through anisotropic dry etching, only the side surface of the hole is left, and the hole is machined as the size of the hole on the substrate 1 is left as it is. W 6 is applied extending over the whole surface so that W is not attached on the side wall of the hole. A resist pattern 7 sufficiently covering the upper section of the hole is formed. An unnecessary section is removed while employing the resist pattern 7 as a mask. W 10 and SiN 8 are removed through side etching while using the resist pattern 7 as a mask, and the resist 7 is removed, thus forming a W gate 2. |
