| 摘要 |
PURPOSE:To enable to prevent electrostatic destruction of a semiconductor element due to contact with the electric charge storing substance of an outside conductor during handling of a semiconductor device, deformation of the outside conductor due to external force, a mutual short-circuiting, damage, etc. by a method wherein the semiconductor device is made to have a construction performed with electric connection between the semiconductor element and an outside circuit in a penetrating hole provided in an enclosure. CONSTITUTION:A ceramic base 21 and a ceramic cap 22 have respectively a penetrating hole 24 to penetrate to the surface on the side from the surface on another side, and the outside edge of an outside conductor 25 is accommodated completely inside thereof. Low melting point glass 23 is adhered on the sealing surface of the ceramic base 21, and the conductor 25 is fixed thereon. The conductor 25 is bent halfway at a right angle, moreover the tip thereof is turned back in a proper shape, and after it is completed, the conductor is made to come in contact with proper pressure with a conductor provided to a substrate to be mounted with a semiconductor device. When fixation of the conductor group is finished, a semiconductor element 26 is bonded to the prescribed position of the ceramic base 21 according to die bonding, and the electrode thereof and the inside edge of the conductor 25 are connected by a wire 27. The ceramic cap 22 is positioned on the ceramic base 21 finally, and sealed in a high temperature atmosphere. |
