| 摘要 |
PURPOSE:To contrive to enhance the speed and to enhance the withstand voltage of an integrated circuit containing MOSFETs by a method wherein the MOSFETs are formed of the specified vertically structural MOSFET and the high speed high withstand voltage laterally structural MOSFET. CONSTITUTION:Layers 7, 7' to act as the substrates of MOSFETs are connected respectively to source regions through electrodes. Although the drain withstand voltage of the MOSFET Q3 is low because the distance between an N type region 6 and the P type layer 7' is the degree of 3mum, but it is constructed in a vertical type enabled to perform high speed motion, while the MOSFET Q4 is formed in a lateral type enlarging the distance between a drain 10 of high impurity concentration and the P type layer 7 to enhance the withstand voltage. Accordingly, a high speed high withstand voltage cascade circuit can be formed using the two MOSFETs formed in the epitaxial growth layer having uniform thickness. |
