| 摘要 |
PURPOSE:To reduce resistance of an electrode and wiring effectively and improve characteristics of a device by a method wherein an electrode and a wiring composed of a silicide film of high melting point metal are formed and subjected to a heat-treatment in an atmosphere whose main component is hydrogen and in which SiO2 is reduced. CONSTITUTION:A MOSFET is composed of MOSi2, SiO2 and Si 4 and subjected to a heat-treatment (900 deg.CX10min) in hydrogen H (H2O 3%). By this heat-treatment, the thickness of SiO2, reduced to 15nm, is increased to 25nm so that the reliability of a dielectric strength of SiO2 is improved. An electrode and wiring composed of a silicode film of high melting point metal are formed and subjected to a heat-treatment in hydrogen H (H2O 3%) to reduce resistance of the electrode and wiring effectively and improve characteristics of the semiconductor device. |
