| 摘要 |
PURPOSE:To reduce the area of a programmable element for a semiconductor memory storage, and to minimize the area of a semiconductor chip by coating a wiring for cutting by fusing with an insulating film and forming a metallic film surrounding a cutting section for the wiring for cutting by fusing on the insulating film. CONSTITUTION:A programmable element is formed to a semiconductor substrate, and a first insulating film is formed on the element. A wiring 1 for cutting connected to an active region in the programmable element is shaped by polycrystalline Si, a second insulating film is formed on the wiring, and windows are bored and the wiring and the second insulating film are connected by an Al wiring 2 and a contact section 3. A metallic film 5 is formed on the second insulating film so as to surround at least cutting section for the wiring 1. A window is bored previously to the cutting section. When the wiring 1 is irradiated by laser beams, laser beams projected to the film 5 are reflected by the film 5, and polycrystalline Si shaped to the lower section of the film 5 is not affected. Consequently, a margin l2 between the wiring 1 and a region 4 can be reduced extremely. Accordingly, the area of the programmable element can be minimized. |
