| 摘要 |
PURPOSE:To attain high resolution and to make a device large-scale by using a BSO polycrystal thin film, which is grown with annealing, as a dielectric thin film which is sandwiched between transparent electrodes and is used. CONSTITUTION:A BSO polycrystal thin film 3' grown with annealing is used as the dielectric thin film which is sandwiched between transparent electrodes 2 and 2' and is used. The transparent electrode 2 is formed on a transparent substrate 1, and a BSO thin film 3 in the polycrystalline state is formed by ion plating or the like, and crystalline granules of polycrystal are grown by annealing, thus obtaining the BSO polycrystal thin film 3'. Then, a large-sized BSO element which has the same degree of orientation as BSO single crystal is obtained locally. An insulating layer 4 and the transparent electrode 2' are formed successively on the BSO polycrystal thin film 3' to obtain a thin film display element. Thus, the thin film display element which is thin and has a high recording density can be produced easily up to a large size, for example, A4 size. Since this display element has less variance of thickness and has high resolution, it is used as a hologram medium or the like. |
