| 摘要 |
PURPOSE:To manufacture another element without lowering efficiency as a gate array by preparing parts except a cell under a wiring region for the gate array in the gate array. CONSTITUTION:A poly Si resistance element 202 and a diffusion layer element 203 are arranged between a cell 201 and a cell 204. The element 203 can also be utilized as a capacitance element by taking substrate potential. When a resistor and a capacitance are connected, a semiconductor device can be formed easily by using the element 202 as the resistor and the element 203 as the capacitance. |
