| 摘要 |
PURPOSE:To prevent the generation of Al corrosion by the intrusion of moisture by obviating the formation of an inter-layer insulating film under a bonding pad in a semiconductor device using phosphorus silicate glass as the inter- layer insulating film. CONSTITUTION:A thermal oxide film 202 for isolating an element is formed on an Si substrate 201, and a phosphorus silicate glass (PSG) film is deposited as an inter-layer insulating film 203 and etched and formed. The film 203 on the scribing line side is removed gradually through etching from a bonding pad 204 region at that time. A passivation film 205 is shaped. When dicing a semiconductor device, one part of the film 205 is broken off at the dicing end of a scribing line. Consequently, it is considered that moisture intrudes from a path shown by the arrow, but moisture is difficult to be absorbed because there is no film 203 on the scribing line side of the pad 204. Even when moisture intrudes, Al corrosion is not generated because the film 203 is not formed under the pad 204. |
