| 摘要 |
PURPOSE:To facilitate formation of ion-implanted layers by annealing magnetic garnet to be ion-implanted in a hydrogen atmosphere to increase variations in an anisotropic magnetic field. CONSTITUTION:A transfer path is formed on a non-magnetic garnet substrate by implanting ion into an epitaxially grown magnetic garnet film to fabricate high density bubble elements. The ion-implanted magnetic garnet film is annealed for the prescribed hours in a hydrogen atomsphere kept at the fixed temperature. Variations DELTAHk in an anisotropic magnetic field are increased more than those in annealing in the air to facilitate formation of ion implantation for ion- implanted bubble elements. |
