| 摘要 |
PURPOSE:To contrive to increase the maximum beam output by a method wherein the layer thickness of an active substance in a double hetero-structure is made thinner in the vicinities of the end surfaces of the resonator, compared with that of the active substance located in the interior of the resonator, and the active layer is made flat in the vertical direction to a groove in the upper vicinity of the groove. CONSTITUTION:In addition to a stripe-shaped groove 10, recesses 11, which are 20-30mum in width and 1mum in depth in the vertical direction to the groove 10, are formed from positions, where are respectively located on both sides of the groove 10 in the vicinity B of one end surface of the resonator and about 5mum away from the groove 10, by a photo resist method at the same time when the groove 10 is formed, and an N type AlxGa1-xAs first clad layer 2, an undoped AlyGa1-yAs active layer 3, a P type AlxGa1-xAs second clad layer 4 and an N type GaAs cap layer 5 are successively formed on an N type substrate 1 by a continuous liquid-phase growth of one time. A P type selective diffusion region is provided along the groove 10 by performing a Zn diffusion, and after that, a P type ohmic electrode 13 and an N type ohmic electrode 14 are respectively formed on the surface and back surface of the wafer. |
