| 摘要 |
PURPOSE:To obtain the semiconductor device suitable for high speed operation by a method wherein, when Si is used as the wiring electrode containing a gate electrode, an Al wiring is laminated at a part of the Si wiring, thereby enabling to reduce the resistance of the Si wiring. CONSTITUTION:A thick field oxide film 12 is formed on the circumferential part of a P type Si substrate 11, an N<+> type source and drain region 13 is formed by diffusion on the surface layer part of the substrate 11 surrounded by the film 12, and a gate electrode 15 consisting of N<+> type Si is attached between said regions through the intermediary of a gate oxide film 14. A wiring 16 consisting of Si, a resistor 17 and the like are provided on the film 12, and an interlayer insulating film 17 is covered on the whole surface. At this time, on the electrode 15 and the wiring 16, an Al partial wiring layer 18 which is smaller in size than the above-mentioned electrode 15 and wiring 16 is coated, and the resistance of the electrode 15 and the wiring 16 is made smaller. Subsequently, an aperture is provided on the film 17 as usual, and an Al lead-out electrode wiring 20 in contact with the region 13 is provided. Through these procedures, the high speed operation of the MOSFET can be accomplished. |
