| 摘要 |
PURPOSE:To obtain a ternary input circuit, the degree of integration thereof is high and stably operates, by making floating gates in an MOS semiconductor device having double layer polycrystalline Si gate structure common, forming control gates in a plural number and constituting a plurality of channels by these floating gates and control gates and a source and a drain. CONSTITUTION:Drain regions 13 and 14 are formed to a semiconductor substrate while holding a source region 12, the surface is coated with an insulating film, floating gates 15, which are positioned among the regions 12 and 13 and the regions 12 and 14, are each surrounded by the insulating film and consists of polycrystalline Si, are formed, and the floating gates are connected by end sections and made common. Control gates 16 and 17 are each formed on these gates 15, and used as a ternary input circuit. That is, structure consisting of a 5V power supply source 20, a P channel MOS transistor 21, an N channel high dielectric resistance transistor 30, two channels 22 and 23, a common single floating gate 24, control gates 25 and 26 and drains 27 and 31 is obtained by these gates and regions and insulating film. |
