Magneto-optic memory element.

摘要

A magneto-optic memory element includes a magneto-optic memory layer (16) mounted on a substrate (10) and sandwiched between a pair of transparent AlN dielectric layers (12, 14) which protect the memory layer (16) from oxygen and moisture. An alloy reflection film (18) is formed on one of the pair of transparent AlN dielectric layers in order to increase the apparent Kerr rotation angle produced by the magneto-optic memory element. The reflection film comprises aluminium and contains an element for preventing the formation of turbidity in the reflection layer, this element being palladium, platinum, or nickel.