| 摘要 |
<p>In a contact arrangement providing a very low thermal and electrical impedance path to a semiconductor device, eg a thyristor, a compliant material (11), such as indium is squeezed between a contoured upper surface of the device and a pressure plate (8) so that the metal is forced into close contact with the electrodes (7). An insulating film (10) protects those areas to which electrical contact is not required, but allows good thermal contact. <IMAGE></p> |
