SEMICONDUCTOR DEVICE HAVING AN INTERSTITIAL TRANSITION ELEMENT LAYER AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device comprising a semiconductor substrate (1) having an impurity of one conductivity type; a diffusion region extending from a major surface of said semiconductor substrate (1) to an inside thereof, said diffusion region having an impurity of the opposite conductivity type; an interstitial transition element layer (5, 6) which is doped with an impurity of said opposite conductivity type and is formed on said major surface of said semiconductor substrate (1) in ohmic contact with said diffusion region; and a wiring electrode layer (7, 8, 10) connected to said interstitial transition element layer (5, 6). A method for manufacturing the semiconductor device is also provided.