| 摘要 |
PURPOSE:To obtain a uniform single-crystal layer over a whole semiconductor layer by providing a film which reflects infrared rays or visual light rays on an insulator beneath the semiconductor layer. CONSTITUTION:A nitride film 4 is deposited on an insulating substrate 1 and a resist 6 is applied on the film 4 along the peripheral part of a domain in which an island shape semiconductor layer is to be formed. When the resist 6 is removed after etching, the nitride film 4 remains along the peripheral part of the island shape semiconductor layer. Polycrystalline silicon is deposited to form the island shape semiconductor layer. A laser beam is applied to the island shape polycrystalline silicon layer 2 along the longer side direction. Because the nitride film has a larger refractive index than an oxide film, it reflects thermal rays (infrared rays and visual light rays) from smelted silicon layer so that the heat is not discharged from the polycrystalline silicon layer 2. Therefore, the silicon of the peripheral part of the semiconductor layer is kept at higher temperature than that of the center part and the growth from random nuclei is suppressed so that the whole island of the semiconductor layer is single-crystallized. |
