| 摘要 |
PURPOSE:To single-crystallize a whole island by a method wherein a polycrystalline or amorphous semiconductor layer surrounded by an insulator is formed on an insulative substrate and a laser light or an electron beam is applied along the center part of the semiconductor layer. CONSTITUTION:A resist 6 is applied on an insulative substrate 1 along the peripheral part of the domain in which an island shape semiconductor layer is to be formed. The surface of the substrate 1 is etched except the peripheral part. After the resist is removed, the peripheral part of the island shape semiconductor layer is thicker than other part. After polycrystalline silicon is deposited and the island shape semiconductor layer is formed, a laser beam is applied to the island shape polycrystalline layer 2 scanning along the longer side direction. With this constitution, silicon of the peripheral part is kept at highter temperature than that of the center part and solidification is progressed from the center to the periphery and the growth from random nuclei is suppressed so that the whole island is single-crystallized. |
