发明名称 |
Semiconductor device with an ion implanted stabilization layer |
摘要 |
A semiconductor device wherein surface stabilization is provided by a shallow layer of ion implanted doping material on the surface of the semiconductor and beneath the passivating oxide layer. One embodiment is a bipolar transistor including a collector region, a base region and an emitter region, the base region being provided with the shallow ion implanted layer at the surface thereof. Another embodiment is a zener diode device with an anode region and a cathode region, the cathode region being provided with the shallow ion implanted layer at the surface thereof. Another embodiment is a JFET with a gate region and a source and drain region and a channel region extending through the gate region between the source and drain regions, the channel region being provided with the shallow ion implanted layer at the surface thereof.
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申请公布号 |
US4496963(A) |
申请公布日期 |
1985.01.29 |
申请号 |
US19790019135 |
申请日期 |
1979.03.09 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
DUNKLEY, JAMES L.;DOBKIN, ROBERT C. |
分类号 |
H01L29/10;H01L29/808;(IPC1-7):H01L29/80 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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