| 摘要 |
PURPOSE:To obtain a semiconductor device which has a complementary transistor including preferable performance by forming by doping the first p type impurity and the second p type impurity different from first impurity in a p type insular region, thereby independently controlling the carrier density distribution and the depth near the surface of the p type insular region and the deepest portion. CONSTITUTION:After the first p type impurity ions are implanted to an n type silicon substrate 1, the second impurity ions are implanted to form two p type insular regions 2 of different carrier densities between the surface part 21 and the lower side part 22. Then, a p<+> type source region 4 and a p<+> type drain regin 5 are formed in the substrate 1, a gate oxidized film 6 and a gate electrode 7 are formed to construct a p-channel MOS transistor. On the other hand, an n<+> type source region 8, an n<+> type drain region 9, a gate oxidized film 10 and a gate electrode 11 are formed in the region 1 to construct an n-channel MOS transistor. |
