| 摘要 |
PURPOSE:To avoid increase of wiring resistance and discontinuity defect by a method wherein, after a contact window is drilled in the insulating film on a semiconductor substrate, the window is filled with a conductive substance to form a conductive substance domain to which a wiring layer which is extended onto the insulative film is connected by an ohmic contact. CONSTITUTION:A prescribed conductive type diffusion domain 2 is formed in a semiconductor substrate 1 and an insulative film 3 is formed over the whole surface. Then a contact window 4 is formed above the diffusion domain 2. A conductive substance layer 6, which has an approximately same thickness as the insulative film 3, is formed over the whole surface. The whole surface is coated uniformly with a photoresist film 7. A plasma gas etching is performed in such a manner that an etching speed for the photoresist film 7 and an etching speed for the conductive substance layer 6 are nearly the same. When the insulative film 3 is exposed, the etching is discontinued. After that, a wiring layer 5 is formed. |
