| 摘要 |
PURPOSE:To enable incident light to be fully absorbed even if the thickness of a photoelectric conversion element is made smaller by providing a structure for an irregular reflection of light to allow light to be subject to irregular reflection in the diagonal direction on the opposite side surface of light incident surface of the photoelectric conversion element with a wave-shaped sectional shape. CONSTITUTION:An Si single crystal is used as a substrate 85, an aeolotropy etching is performed from both surfaces to form a wave-plate shape, and then fine recesses and projections 88 are formed on the rear surface by dry etching, Then, Ag is vacuum-deposited on the recesses and projections to form a rear surface reflection mirror 87 which also is used as a rear-surface electrode, an n+ layer 84 is formed on the surface of a photoelectric conversion element by diffusion of phosphor, the surface is covered with a passivation oxide film 83, and then a light-reflection prevention film 82 is formed on it. A surface electrode 81 is formed on one part of the projection part on the surface and is in ohmic contact with the n+ layer 84 through a contact hole 80 opened to the oxide film 83. It enables light incident from the surface to be subject to irregular reflection on the rear surface. Then, even if light arrives at the surface again, nearly all of it is reflected into the inside of element again and is enclosed into the substrate 85. |
