| 摘要 |
PURPOSE:To enable growth of single crystal without requiring removal of naturally oxidized film, by growing specific single crystal to carry out lattice conformity with single crystal of Al.Ga.As compound on the surface of the single crystal. CONSTITUTION:The single crystal AlxGa1-xAs (x=0.3) 3 of Al.Ga.As compound to carry out lattice conformity with the single crystal 1 on the naturally oxidized film 2 remaining on the surface of the single crystal 1 of Al.Ga.As compound which was put in an atmosphere and formed the naturally oxidized film on the surface. By this method, the single crystal 3 can carry out lattice conformity with the single crystal 1 and be grown by MBE method without removing the naturally oxidized material 2 on the surface of the single crystal 1. Further, single crystal of GaAs compound to carry out lattice conformity with the grown single crystal can be grown. |
