| 摘要 |
PURPOSE:To improve flatness of a semiconductor layer obtained by epitaxial growth by carrying out the selective epitaxial growth for the portion selectively formed to be removed on the insulation film of a substrate under reduced pressure. CONSTITUTION:An insulation film 2 is formed on a substrate 1. Then, part of semiconductor formed on the film 2 is selectively removed. Next, on the removed area, a semiconductor layer 4 is formed by epitaxial growth technology under reduced pressure. Then, a semiconductor element is formed on the layer 4. In this way, flatness and selectivity of the semiconductor layer which is obtained by the epitaxial growth under reduced pressure can be improved. |
