| 摘要 |
PURPOSE:To obtain the titled device of excellent dimensional accuracy by a method wherein a semiconductor is stretched while being heated to a temperature below the melting point into the final element dimension in he cross section, and is then separated into each element by being cut in the direction crossing with the direction of tension. CONSTITUTION:A plate-formed Si and a metallic plate are incorporated so as to have the same proportion as that of the transistor SIT finally obtained. Here, the numeral 20 represents an N<-> type Si, 21 an N<+> type Si, 22 a P<+> type Si, and 23 an electrode metal such as Al. The semiconductor and the metal combined are heated to a temperature below 1,400 deg.C close to the melting point of Si by means of high frequency heater 24 in an inert gas and then stretched to the direction 25. The degree of tension is set so that the resulting cross section may become 1/10 or less of that in the state of combination. Then, the narrowed semiconductor 27 is separated into each element with a cutter 26. |
