发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent generation of migration, etc. by cutting to divide a semiconductor substrate after the surface of the substrate wherein electrodes are installed is covered with a resin film which has water repellent property. CONSTITUTION:On the back surface of a semiconductor wafer wherein a specific conductive type semiconductor region is formed, a silver electrode 7 is installed and at the opening of insulation material on the front surface, a silver bump electrode is formed. Then, the surface of the semiconductor wafer including the exposed surface of an electrode 1 is covered with transparent or translucent water-repellent resin material and a resin film 9 is formed to prevent exposure of the electrode surface externally. Next, a deeply cut groove 8 into the semiconductor base body is formed on the surface of the wafer spreading coolant and plural number of semiconductor regions and the electrodes are separated. In a semiconductor element obtained in this way, migration of silver can be restrained due to the shut off of water molecules from the surface since the surface of the electrode 1 is perfectly covered by the resin film.</p>
申请公布号 JPS6016442(A) 申请公布日期 1985.01.28
申请号 JP19840104578 申请日期 1984.05.25
申请人 HITACHI SEISAKUSHO KK 发明人 YAMAMOTO MASASHI;IKEDA HIROSHI
分类号 H01L21/301;H01L21/78;(IPC1-7):H01L21/78 主分类号 H01L21/301
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