发明名称 |
METHOD AND DEVICE FOR FORMING THIN FILM |
摘要 |
PURPOSE:To form a thin film contg. a material which is difficult to be supplied as a target by a sputtering method by forming the material which is difficult to be vacuum-evaporated to a thin film by a sputtering method and the material which is difficult to be manufactured into a target into a thin film by a vacuum deposition method. CONSTITUTION:A thin film is formed on a substrate 38 by carring out simultaneously or alternately a stage for forming a sputtered thin film in which the thin film is formed by driving off target-constituting atoms from the surface of a target 36 by the bombardment of high energy ion in a vacuum vessel 31 and depositing the atoms on the surface of the substrate 38 and a stage for forming a vacuum-deposited thin film in which the thin film is stuck and formed on the surface of the substrate 38 by disposing an evaporating source 34 contg. a material 37 for vapor deposition in the same vessel 31 and evaporating the material 37 by heating, thereby depositing the same on the substrate. |
申请公布号 |
JPS6017070(A) |
申请公布日期 |
1985.01.28 |
申请号 |
JP19830124862 |
申请日期 |
1983.07.11 |
申请人 |
NIPPON DENSHIN DENWA KOSHA |
发明人 |
SERIKAWA TADASHI;OKAMOTO AKIO |
分类号 |
C23C14/24;C23C14/22;(IPC1-7):C23C14/22 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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