发明名称 METHOD AND DEVICE FOR FORMING THIN FILM
摘要 PURPOSE:To form a thin film contg. a material which is difficult to be supplied as a target by a sputtering method by forming the material which is difficult to be vacuum-evaporated to a thin film by a sputtering method and the material which is difficult to be manufactured into a target into a thin film by a vacuum deposition method. CONSTITUTION:A thin film is formed on a substrate 38 by carring out simultaneously or alternately a stage for forming a sputtered thin film in which the thin film is formed by driving off target-constituting atoms from the surface of a target 36 by the bombardment of high energy ion in a vacuum vessel 31 and depositing the atoms on the surface of the substrate 38 and a stage for forming a vacuum-deposited thin film in which the thin film is stuck and formed on the surface of the substrate 38 by disposing an evaporating source 34 contg. a material 37 for vapor deposition in the same vessel 31 and evaporating the material 37 by heating, thereby depositing the same on the substrate.
申请公布号 JPS6017070(A) 申请公布日期 1985.01.28
申请号 JP19830124862 申请日期 1983.07.11
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 SERIKAWA TADASHI;OKAMOTO AKIO
分类号 C23C14/24;C23C14/22;(IPC1-7):C23C14/22 主分类号 C23C14/24
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