| 摘要 |
PURPOSE:To prepare a magnetic thin film easily and in high accuracy, by subjecting a thin film of garnet having larger thickness than that of specifications produced by epitaxial growth method to ion injection with a specific ion seed, followed by finishing it by chemical etching. CONSTITUTION:A thin film of garnet having film thickness about 0.05-0.2mu thicker than that of specifications is grown by epitaxial thin film. It is subjected to ion injection with an ion seed having an atomic number >= that of He, and the thin film having a film thickness of specifications is finished by chemical etching. This process can eliminate the surface layer prepared by epitaxial growth method, and finish the film thickness in a range of specifications in good accuracy easily. |
