| 摘要 |
PURPOSE:In subjecting a semiconductor of III-V group compound to epitaxial growth, to enlarge attachment coefficient, and to enable doping of impurity which could not be doped conventionally, by irradiating the impurity with laser light of dyestuff so that molecule of the impurity is excited. CONSTITUTION:In subjecting a semiconductor of III-V group compound to epitaxial growth by irradiating a semiconductor single crystal substrate (e.g., GaAs, etc.) with molecular beam of at least >= one III group element (e.g., Ga, etc.), molecular beam of at least >= one V group element (e.g., As, etc.), and molecular beam of an impurity element (II group element except Be, etc.) to be doped, a part just front the substrate or the substrate is directly irradiated with ultraviolet rays or laser light of dyestuff. By the irradiation, the molecule of impurity is excited, attachment coefficient of the impurity molecule to the substrate is enlarged, and II group element (e.g., Mg, etc.) except Be which could not be doped conventionally can be doped. |
