| 摘要 |
In the new structure of the Schottky barrier field effect MESFET transistor, consisting of a substrate and three electrodes (source, gate and drain), the electrical resistance of the gate is practically zeroed by using an electrode having the shape of a continuous sheet which bypasses a portion of source and created an air layer between its connections. The fabrication process basically includes a first photomasking, evaporation of the metallization layer on photoresist material, growing, a second photomasking and etching of total metallization and removal of the two photoresists. |
