| 摘要 |
PURPOSE:To enable to form epitaxial growth films of high quality on substrates of a large number by a method wherein the substrates are carried in an introducing chamber from the atmosphere at the same time according to a cassette enabled to accommodate the substrates of the large number, a pure cassette is set up separately in a high vacuum chamber, and the substrates are transferred thereon. CONSTITUTION:A cassette 6 loading substrates of a large number is put in an introducing chamber 7. The introducing chamber 7 is partitioned from a high vacuum chamber 9 or a conveying chamber 10 according to a gate valve 8. After the cassette is put in, evacuation of air is performed up to make pressure in the introducing chamber to reach nearly 10<-7>Torr, then the gate valve 8 is opened to transfer the whole substrates onto a second cassette 11 put in the high vacuum chamber 9 of 10<-9>-10<-10>Torr, and the gate valve 8 is closed. The substrates are transferred inside of the conveying chamber 10 held at a high vacuum, sent to a preparation and analysis chamber 12, growth chambers 13, 13' of 10<-10>Torr or less through opening and closing of gate valves 15, and carried out in the atmosphere from a delivery chamber 14. |
