| 摘要 |
PURPOSE:To obtain the high-speed semiconductor device by reducing the base resistance and the collector-base junction capacitance by minifying of an interval between the emitter region and the base electrode and reduction of the base region. CONSTITUTION:After forming a polycrystalline Si film 14 and an Si nitride film 15 on the base region 12, the Al 16 is formed on the emitter contact region. Next, an oxide film 17 is deposited thinly compared with the thickness of the Al 16. Then a narrow groove is formed between the Al 16 and the oxide film 17 and further the nitride film 15 is exposed at the bottom of the groove. (Next, the oxide film 17 is removed and p type imprities are implanted into the film 14) by using the Al 16 as a mask. Next, the film 14 is etched by using the nitride film 15 as a mask and the resist 18 is formed on the base contact region, after which oxidation of the surfaces of the film 14 and the base region 12 is performed to form a thermal oxidation film 19 and an external base region 20. Next, the emitter contact region is opened and n type impurities are implanted into the film 14 by using the resist 21 as a mask to form the n<+> type emitter region 14. On the part where the nitride film 15 was removed, the emitter electrode 23 and the base electrode 24 are formed. |
