| 摘要 |
PURPOSE:To increase the mobility of holes, and to improve the electrical characteristics of a semiconductor element by decomposing hydrogenated silicon, the degree of dilution thereof to H2 or an inert gas is large, by a plasma reaction and depositing the decomposed silicon on a substrate. CONSTITUTION:10-1% SiH4 or Si2H6 diluted with H2 or an inert gas is used as a raw material gas, a substrate temperature is kept within a range of 350- 400 deg.C on Si2H6 and within a range of 400-450 deg.C on SiH4, and glow discharge power is brought to discharge power density exceeding 0.2W/cm<2>. Since crystals, crystalline grain size thereof is kept within a range of 200-2,000Angstrom and a principal ingredient thereof is silicon, and an amorphous substance, crystalline grain size thereof is less than 200Angstrom and a principal ingredient thereof is silicon, are mixed, an atomicity ratio of silicon to hydrogen is kept to 10 at% or less and crystalline grain size is large, a semiconductor thin-film has large hole mobility. |
